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Biography

Before joining UNCC, Dr. Zeng was a postdoctoral research fellow at Stanford University’s Wide-Bandgap Lab (2019-2024), where he focused on novel vertical gallium oxide (Ga₂O₃) and gallium nitride (GaN) devices. During this time, he pioneered the study of diffusion doping in Ga₂O₃ and developed the Ga₂O₃ 'Vertical Diffused Barrier Field-Effect-Transistor’ (VDBFET), designed for next-generation ultra-high-power electronics, especially for fast electric-vehicle charging, solid-state-transformers, and extreme environment operations. He also demonstrated state-of-the-art vertical GaN diodes with stable avalanching capability up to 3-kV, utilizing various novel edge termination techniques.

He received his Ph.D. and M.S. in Electrical Engineering from the University at Buffalo- SUNY (2013-2019), specializing in the design and fabrication of high-voltage lateral Ga₂O₃ MOSFETs. He has participated in some of the earliest work on Ga₂O₃ device research in the Singisetti Research Group at UB. Most notably, the first demonstration of a kilo-volt class lateral MOSFET at 1.85-kV, and later, the world record 8-kV Ga₂O₃ MOSFET. He also holds a B.Eng. from the Communication University of Zhejiang, with a passion for general science and engineering topics as well as sharing and communicating them.

News

• (May 2024, Upcoming) Dr. Ke Zeng will give an invited talk at the 245th ECS (The Electrochemical Society) meeting held at San Francisco, titled “(Invited) Breakdown Improvement of Mg-Diffused Current Blocking Layer in Ga₂O₃”. He will also serve as the chair for session “H01 - Wide-Bandgap Semiconductor Materials and Devices - Gallium Oxide 1”. More details can be found at: https://ecs.confex.com/ecs/245/meetingapp.cgi/Symposium/4786