Selected Publications

[Click Google Scholar Profile for a full list of publications.]

Journals

  1. K. Zeng, R. Soman, Z. Bian, S. Jeong, and S. Chowdhury, “Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer,” IEEE Electron Device Lett., vol. 43, no. 9, pp. 1527–1530, Sep. 2022, doi:10.1109/LED.2022.3196035

  2. Z. Bian, K. Zeng, and S. Chowdhury, “2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer,” IEEE Electron Device Lett., vol. 43,. no. 4, pp. 596-599, 2022. DOI: 10.1109/LED.2022.3149748

  3. S. Sharma, K. Zeng, S. Saha, and U. Singisetti, “Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage,” IEEE Electron Device Lett., vol. 41,. no. 6, pp. 836-839, 2020. DOI: 10.1109/LED.2020.2991146

  4. K. Zeng, A. Vaidya, and U. Singisetti, “A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm2 on-resistance,” Applied Physics Express., vol. 12, no. 8, pp 081003, 2019. doi: 10.75671882-0786ab2e86

  5. K. Zeng, A. Vaidya, and U. Singisetti, “1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs,” IEEE Electron Device Lett., vol. 39, no. 9, pp. 1385–1388, 2018. doi: 10.1109/LED.2018.2859049

  6. K. Zeng and U. Singisetti, “Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations,” Appl. Phys. Lett., vol. 111, no. 12, p. 122108, 2017. doi: 10.1063/1.4991400

  7. K. Zeng, J. S. Wallace, C. Heimburger, K. Sasaki, A. Kuramata, J. A. G. Jr, and U. Singisetti, “Ga2O3 MOSFETs using Spin-on-Glass Source/Drain Doping Technology,” IEEE Electron Device Lett., vol. 38, no. 4, pp. 5–8, 2017. doi: 10.1109/LED.2017.2675544

  8. K. Zeng, Y. Jia, and U. Singisetti, “Interface State Density in Atomic Layer Deposited SiO2/β-Ga2O3 (¯201) MOSCAPs,” IEEE Electron Device Lett., vol. 37, no. 7, pp. 906–909, 2016. doi: 10.1109/LED.2016.2570521

  9. Y. Jia, K. Zeng, J. S. Wallace, J. A. Gardella, and U. Singisetti, “Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01),” Appl. Phys. Lett., vol. 106, no. 10, p. 102107, 2015. doi: 10.1063/1.4915262

Conferences

  1. Ke Zeng, Zhengliang Bian, and Srabanti Chowdhury, “On the Mg-Diffused Current Blocking Layer for Ga2O3 Vertical Diffused Barrier Field-Effect-Transistor (VDBFET)”, 6th U.S. Workshop on Gallium Oxide (GOX 2023), University at Buffalo Campus, Buffalo, New York, August 13-16, 2023.

  2. K. Zeng, S. Chowdhury, B. Gunning, R. Kaplar, and T. Anderson, “Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination ”, in 2021 IEEE International Reliability Physics Symposium (IRPS), 21-25 March 2021, doi: 10.1109/IRPS46558.2021.9405165

  3. K. Zeng, A. Vaidya, and U. Singisetti, “710 V Breakdown Voltage in Field Plated Ga2O3 MOSFET”, in 76th Device Research Conference (DRC), 2018. (Poster)

  4. Ke Zeng and U. Singisetti, “Temperature Dependent Characterization of Ga2O3 MOSFETswith Spin-on-Glass Source/Drain Doping”, in 75th IEEE Device Research Conference, 2017, June 25-28. (Oral)

  5. K. Zeng, Y. Jia, and U. Singisetti, “Electrical Characterization of Atomic Layer Deposited SiO2/β-Ga2O3 Interface,” in 2016 Lester Eastman Conference (LEC), 2016, p. 64. (Poster)

  6. K. Zeng, K. Sasaki, A. Kuramata, T. Masui, and U. Singisetti, “Depletion and enhancement mode β-Ga2O3 MOSFETs with ALD SiO2 gate and near 400 V breakdown voltage,” in 74th IEEE Device Research Conference ( Technical Digest), 2016, vol. 105. (Poster)

  7. K. Zeng and U. Singisetti, “Conductance spectroscopy study of interface states in ALD deposited SiO2 on β-Ga2O3,” in The 1st International Workshop on Gallium Oxide and Related Materials, 2015, pp. 162–163.(Oral)